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Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologica
Properties of Aluminium Gallium Arsenide
Language: en
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The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter differ
Properties of Gallium Arsenide
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It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then,
Electronic Transport in Mesoscopic Systems
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Advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron.
Planewaves, Pseudopotentials and the LAPW Method
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Over the past decade the world's technological and industrial base has become increasingly dependent on advanced materials. There is every indication that this