Download or read book Growth and Characterization of Polycrystalline Silicon and Microcrystalline Silicon Carbide Thin Films Using ECR-PECVD written by Bryan Kent Oliver and published by . This book was released on 1999 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: On the other hand, with He dilution at 15 mTorr the percent crystallinity obtained was also 86%, with decreasing crystallinity at lower pressures. We found that a dilution consisting of a 50%-50% mixture of H2-He, which allows a high ion bombardment deposition from the helium that is also benefited by the hydrogen etching effect, did not compromise the quality of the films. This plasma selection produced about 84% crystalline films, independent of the pressure setting. X-ray diffraction reveals the dominant crystal textures are 111 and 220 orientations, with 220 preferential growth at higher deposition pressures. The CH4/SiH4 flow ratio was found critical to the formation of microcrystalline SiC.