Strain-Induced Effects in Advanced MOSFETs

Strain-Induced Effects in Advanced MOSFETs
Author :
Publisher : Springer Science & Business Media
Total Pages : 260
Release :
ISBN-10 : 9783709103821
ISBN-13 : 3709103827
Rating : 4/5 (827 Downloads)

Book Synopsis Strain-Induced Effects in Advanced MOSFETs by : Viktor Sverdlov

Download or read book Strain-Induced Effects in Advanced MOSFETs written by Viktor Sverdlov and published by Springer Science & Business Media. This book was released on 2011-01-06 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.


Strain-Induced Effects in Advanced MOSFETs Related Books

Strain-Induced Effects in Advanced MOSFETs
Language: en
Pages: 260
Authors: Viktor Sverdlov
Categories: Technology & Engineering
Type: BOOK - Published: 2011-01-06 - Publisher: Springer Science & Business Media

DOWNLOAD EBOOK

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device desi
Strain Induced Effects on Lateral Power MOSFETs
Language: en
Pages:
Authors: Jingjing Michelle Liu
Categories:
Type: BOOK - Published: 2009 - Publisher:

DOWNLOAD EBOOK

Experiments demonstrate that strain breaks the on-resistance/breakdown voltage tradeoff by enhancing on-resistance while maintaining breakdown voltage. There ar
Strain-Engineered MOSFETs
Language: en
Pages: 320
Authors: C.K. Maiti
Categories: Technology & Engineering
Type: BOOK - Published: 2018-10-03 - Publisher: CRC Press

DOWNLOAD EBOOK

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors
Effectiveness of Strain Solutions for Next-Generation MOSFETs
Language: en
Pages: 206
Authors: Nuo Xu
Categories:
Type: BOOK - Published: 2012 - Publisher:

DOWNLOAD EBOOK

The conventional planar bulk MOSFET is difficult to scale down to sub-20nm gate length, due to the worsening performance variability and short channel effects.
Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting
Language: en
Pages: 464
Authors: Alexei Nazarov
Categories: Technology & Engineering
Type: BOOK - Published: 2014-08-28 - Publisher: Springer

DOWNLOAD EBOOK

This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures