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The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor
Language: en
Pages: 170
The Growth and Characterization of Beta Silicon Carbide (β-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor
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The Influence of Annealing on Thin Films of Beta SiC
Language: en
Pages: 24
Authors: Irvin Berman
Categories: Annealing of crystals
Type: BOOK - Published: 1972 - Publisher:

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Thin films of beta silicon carbide were prepared on alpha silicon carbide substrates by the chemical vapor deposition (CVD) technique involving the hydrogen red
Growth and Characterization of Silicon Carbide Thin Films and Nanowires
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Silicon carbide (SiC) based electronics and sensors hold promise for pushing past the limits of current technology to achieve small, durable devices that can fu
Silicon Carbide Thin Films Via Low Pressure Chemical Vapor Deposition for Micro- and Nano-electromechanical Systems
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