Physics and Technology of Silicon Carbide Devices
Author | : Yasuto Hijikata |
Publisher | : BoD – Books on Demand |
Total Pages | : 416 |
Release | : 2012-10-16 |
ISBN-10 | : 9789535109174 |
ISBN-13 | : 9535109170 |
Rating | : 4/5 (170 Downloads) |
Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.