Transport in Metal-Oxide-Semiconductor Structures
Author | : Hamid Bentarzi |
Publisher | : Springer Science & Business Media |
Total Pages | : 115 |
Release | : 2011-01-12 |
ISBN-10 | : 9783642163043 |
ISBN-13 | : 3642163041 |
Rating | : 4/5 (041 Downloads) |
Download or read book Transport in Metal-Oxide-Semiconductor Structures written by Hamid Bentarzi and published by Springer Science & Business Media. This book was released on 2011-01-12 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.